Etching processing method

Details Etching processing method Etching processing method

2006-10-17

2006-10-17

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C438S729000, C216S067000

Reexamination Certificate

active

07122479

ABSTRACT:
An etching processing method capable of etching a low dielectric constant layer at a reduced cost by using an etching processing apparatus comprising a vacuum vessel, a sample loading electrode disposed in the vacuum vessel, a gas introduction device for introducing a reaction gas into the vacuum vessel, an antenna for forming plasmas in the vacuum vessel, and a high frequency power supply for supplying a bias power to a sample loaded on the sample loading electrode, wherein the bias power to be supplied to the sample is 3 W/cm2or less, and the gas introduction device introduces a gas containing chlorine atoms or bromine atoms to apply etching processing to an inorganic insulation material of low dielectric constant loaded on the loading electrode.

REFERENCES:
patent: 5202273 (1993-04-01), Nakamura
patent: 6040248 (2000-03-01), Chen et al.
patent: 6323125 (2001-11-01), Soo et al.
patent: 6362109 (2002-03-01), Kim et al.
patent: 6402974 (2002-06-01), Trevor et al.
patent: 6465159 (2002-10-01), Ni et al.
patent: 6547977 (2003-04-01), Yan et al.
patent: 2002/0177321 (2002-11-01), Li
patent: 2003/0234238 (2003-12-01), Ohmoto et al.
patent: 0101470 (2001-01-01), None
“Enhanced borderless contact process-uses thin alumina layer to prevent erosion of mask oxide layer during RIE processing”; RD 337,045; May 10, 1992′; ANONYMOUS; abstract only.
“Seleective deposition of tungsten into contact windows-including forming alumina insulating layer and titanium nitride sidewalls in windows”; RD 337,046; May 10, 1992′; ANONYMOUS; abstract only.

Affiliated with

Also associated with

Rating

Etching processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching processing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3652639