Etching process

Details Etching process Etching process

1994-03-16

1998-06-23

Tung, T.

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

1566431, 1566461, 216 68, 216 79, H01L 2102

Patent

active

057700982

ABSTRACT:
In order to etch an object to be processed, such as a semiconductor wafer, the object to be processed is placed in a vacuum processing chamber, an etching gas is introduced into the vacuum processing chamber, and electrical power is applied to a pair of electrodes within the vacuum processing chamber by a high-frequency electrical power source. A mixed gas of carbon monoxide and a gas which does not contain hydrogen and which contains at least one element from the group IV elements and at least one element from group VII elements is used as the etching gas. A halogenated carbon gas, typically a fluorocarbon such as C.sub.4 F.sub.8, is used as the gas containing elements from the group IV and group VII elements. The concentration of carbon monoxide in the etching gas could be 50% or more. At least approximately 86% of an inert gas, such as argon, xenon, krypton, or N.sub.2 and O.sub.2 could be added to the etching gas. Use of the above etching gas enables a high etching selectivity and prevents the formation of fences.

REFERENCES:
patent: 4094732 (1978-06-01), Reinberg
patent: 4176004 (1979-11-01), Johnson et al.
patent: 4726879 (1988-02-01), Bondur et al.
patent: 5108542 (1992-04-01), Lin
patent: 5356515 (1994-10-01), Tahara et al.
patent: 5368684 (1994-11-01), Ishikawa et al.
patent: 5380401 (1995-01-01), Jones et al.
patent: 5399237 (1995-03-01), Keswick et al.

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