Etching of hard masks

Details Etching of hard masks Etching of hard masks

2005-08-09

2005-08-09

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains inorganic material

C216S041000, C216S074000, C216S079000, C438S706000, C438S723000

Reexamination Certificate

active

06926843

ABSTRACT:
Lines are fabricated by patterning a hard mask to provide a line segment, the line segment having a first dimension measured across the line segment; reacting a surface layer of the line segment to form a layer of a reaction product on a remaining portion of the line segment; and removing the reaction product without attacking the remaining portion of the line segment and without attacking the substrate to form the line segment with a dimension across the line segment that is smaller than the first dimension.

REFERENCES:
patent: 5282925 (1994-02-01), Jeng et al.
patent: 5569355 (1996-10-01), Then et al.
patent: 5585012 (1996-12-01), Wu et al.
patent: 5685951 (1997-11-01), Torek et al.
patent: 5762755 (1998-06-01), McNeilly et al.
patent: 5868811 (1999-02-01), Khan et al.
patent: 5876879 (1999-03-01), Kleinhenz et al.
patent: 5980770 (1999-11-01), Ramachandran et al.
patent: 5990019 (1999-11-01), Torek et al.
patent: 6030541 (2000-02-01), Adkisson et al.
patent: 6211044 (2001-04-01), Xiang et al.
patent: 6235627 (2001-05-01), Nakajima

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