Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-03-07
2006-03-07
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S748000
Reexamination Certificate
active
07008877
ABSTRACT:
The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, and a plasma is generated. An RF bias is supplied to the support member in the vacuum chamber through an RF bias frequency generator at or below the ion transit frequency. Exposed material is etched from the photolithographic substrate with improved CD Etch Linearity and CD Etch Bias since the low frequency bias allows the developed charge on the photolithographic substrate, generated by the plasma, to dissipate.
REFERENCES:
patent: 5667705 (1997-09-01), Miyazaki et al.
patent: 5820723 (1998-10-01), Benjamin et al.
patent: 6372654 (2002-04-01), Tokashiki
patent: 6391790 (2002-05-01), Stoehr et al.
patent: 6813534 (2004-11-01), Sui et al.
V.J., Law, et al, 300 kHz Pulse Plasma Etching of GaAs using a mixture of CICH3 and H2; J. Vac.Sci Technol. B11(6), Nov./Dec. 1993.
S. Samukawa, et al, Reduction of Plasma Induced Damage in an Inductively Coupled Plasma Using Pulsed Source Power; J.Vac.Sci Technol. B18(2), Mar./Apr. 2000.
S.Samukawa, et al, Pulse-Time Modulated Electron Cyclotron Resonance Plasma Discharge for ..-J. Vac.Sci. Technol. A14, 3049 1996.
H. Sugai, et al, Diagnostics and Control of radicals in an Inductively Coupled Etching Reactor; J. VacSci. Technol. A13, 887 1995.
Constantine Christopher
Johnson David J.
Plumhoff Jason
Westerman Russell
Dang Phuc T.
Holland & Knight
Unaxis USA Inc.
LandOfFree
Etching of chromium layers on photomasks utilizing high... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Etching of chromium layers on photomasks utilizing high..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching of chromium layers on photomasks utilizing high... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3614184