Etching MoSi.sub.2 using SF.sub.6, HBr and O.sub.2

Details Etching MoSi.sub.2 using SF.sub.6, HBr and O.sub.2 Etching MoSi.sub.2 using SF.sub.6, HBr and O.sub.2

1993-10-13

1994-10-11

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 1566591, 252 791, H01L 21306, B44C 122

Patent

active

053544170

ABSTRACT:
A process for selectively etching a substrate 20 having a molybdenum silicide layer 25 with a resist material 26 on portions of the molybdenum silicide layer 25 is described. The substrate 26 is placed into an etch zone 54 and the process gas comprising SF.sub.6 and HBr is introduced into the etch zone 54. Preferably, the volumetric flow ratio of SF.sub.6 :HBr is from about 1:10 to about 1:1, and more preferably, an oxygen containing gas such as O.sub.2 is added to the process gas. A plasma is generated in the etch zone 54 to form an etch gas from the process gas that anisotropically etches the MoSi.sub.x layer 25 with good selectivity and reduced profile microloading.

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