Etching methods and apparatus and substrate assemblies...

Details Etching methods and apparatus and substrate assemblies... Etching methods and apparatus and substrate assemblies...

2006-10-24

2006-10-24

Hiteshew, Felisa (Department: 1722)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S702000, C438S710000, C438S723000

Reexamination Certificate

active

07125804

ABSTRACT:
Methods and apparatus for etching substrates such as silicon wafers are provided. In one specific approach, a surface of the substrate assembly is covered with a resist that is patterned to define features to be etched. In this approach, the surface is then exposed to a plasma in a plasma etcher so that surface areas not covered with the resist are etched, while the thickness of the resist increases or etches at a rate that is at least ten times slower than that of the exposed areas of the surface. This etching process can be followed with a conventional plasma etch. By combining the etching that increases the resist thickness with the conventional etching of resist in which the resist thins during etching, features having high-aspect-ratios can be etched.

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