Etching method, method of fabricating metal film structure,...

Details Etching method, method of fabricating metal film structure,... Etching method, method of fabricating metal film structure,...

2008-07-01

2008-07-01

Tran, Binh X. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S701000, C438S713000, C438S724000, C438S725000, C438S744000

Reexamination Certificate

active

07393791

ABSTRACT:
There is provided an etching method in which a protective film existing in an etching-destined region of a substrate structure is removed by means of ICP-RIE to form an exposure region of the principal surface of the substrate. The substrate structure comprises a substrate, a protective film formed on the substrate, a photoresist layer formed on the protective film, and a hole formed throughout the photoresist layer. The hole comprises an opening formed in the photoresist layer surface and a hollow linked to the opening in the thickness direction of the photoresist layer and reaching the protective film. ICP-RIE is performed under conditions such that (1) ICP power is 20 to 100 W, (2) RIE power is 5 to 50 W, and (3) the pressure in the etching chamber is 1 to 100 mTorr.

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