Etching method for use in fabrication of semiconductor devices

Details Etching method for use in fabrication of semiconductor devices Etching method for use in fabrication of semiconductor devices

1996-09-05

1998-08-25

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438720, 438738, 438733, 438770, 438963, 438911, 134 12, H01L 21302

Patent

active

057983038

ABSTRACT:
An etching method includes providing a first surface and a second surface with the second surface lying substantially vertical to the first surface. A material is provided over at least a portion of the first and second surface. The material is anisotropically etched from at least the first surface resulting in a blocking material formed over at least a portion of the material on the second surface. The blocking material is removed and the portion of the material formed over the second surface is isotropically etched. The blocking material may be a polymer material, and the removing step may include oxidizing the polymer material.

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