Etching method for photoresists or polymers

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156668, 156345, 437229, 20419232, H01L 21306

Patent

active

050079832

ABSTRACT:
A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material (13A) such as polyethylene or poly(vinyl fluoride), producing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist (13). The sample to be etched is located away from the plasma glow discharge region (11) so as to avoid damaging the substrate by exposure to high-energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

REFERENCES:
patent: 3692655 (1972-09-01), Vossen
patent: 4175235 (1979-11-01), Niwa et al.
patent: 4243476 (1981-01-01), Ahn et al.
patent: 4368092 (1983-01-01), Steinberg et al.
patent: 4412119 (1983-10-01), Nomatsu et al.
patent: 4554047 (1985-11-01), Cook et al.
patent: 4595570 (1986-06-01), Fuhuta et al.
patent: 4612099 (1986-09-01), Tanno et al.
Curran, J. E., "Physical and Chemical Etching in Plasmas", Thin Solid Films, 86 (1981), pp. 101-110.
Vukanovic et al. in J. Vac. Sci. Technol., vol. 6, No. 1, entitled "Plasma Etching of Organic Materials II. Polyimide Etching and Passivation Downstream of an O.sub.2 -CF.sub.4 -Ar Microwave Plasma" (Jan./Feb. 1988).
VLSI Technology, edited by S. M. Sze, published by the McGraw-Hill Company of New York, N.Y., pp. 328-330 (1983).
Plasma Etching: An Introduction, edited by D. M. Manos and D. L. Flamm, pp. 19 and 102, published by Academic Press, Inc. (1989).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Etching method for photoresists or polymers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching method for photoresists or polymers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching method for photoresists or polymers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-419458

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.