Etching method for forming air bridge pattern on silicon substra

Details Etching method for forming air bridge pattern on silicon substra Etching method for forming air bridge pattern on silicon substra

1997-08-12

1999-03-30

Brown, Peter Toby

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438753, 438798, H01L 2100

Patent

active

058887610

ABSTRACT:
The present invention is for enlarging a freedom of layout including an air bridge pattern and enhancing the availability for various purposes. A mask layer including an air bridge pattern is formed on a (100) plane of a silicon substrate, isotropic etching is carried out until a point of intersection between tangents of a peripheral curved plane comes to under the air bridge pattern plane, and then an air bridge is formed by means of anisotropic etching.

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