Etching method and etching apparatus

Details Etching method and etching apparatus Etching method and etching apparatus

2007-03-13

2007-03-13

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S711000, C438S713000, C438S728000, C438S743000

Reexamination Certificate

active

10501917

ABSTRACT:
A mask material layer102of a desired pattern is formed on a silicon oxide film101. The exposed parts of the silicon oxide film101is etched in accordance with the pattern of the mask material layer102by plasma etching by using a mixed gas fed at a rate such that the ratio (C5F8+O2/Ar) of the total flow rate of C5F8+O2to the flow rate of Ar is 0.02 (2%) or less. Thus, a generally vertical right-angled portion is formed in the silicon oxide film101. Therefore, no microtrenches are formed, and etching into a desired pattern is precisely effected.

REFERENCES:
patent: 6159862 (2000-12-01), Yamada et al.
patent: 2001/0045667 (2001-11-01), Yamauchi et al.
patent: 10-150046 (1998-06-01), None
patent: 2000-307001 (2000-11-01), None
patent: 2001-127039 (2001-05-01), None
patent: 2001127039 (2001-05-01), None
patent: 99/33095 (1999-07-01), None

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