Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-10-23
2007-10-23
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S707000, C438S710000, C438S714000, C438S725000, C438S734000
Reexamination Certificate
active
10956365
ABSTRACT:
An etching method etches an organic film by using an inorganic film as a mask at a high etch rate, in a satisfactory etch profile in a satisfactory in-plane uniformity without causing the inorganic film to peel off. An organic film formed on a workpiece is etched by using an inorganic film as a mask with a plasma produced by discharging an etching gas in a processing vessel (1). The etching method uses a mixed gas containing NH3gas and O2gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio of 40% or above. The etching method uses NH3gas as an etching gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio below 40%.
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Notification of Receipt of Record Copy (Form PCT/IB/301) issued in connection with PCT/JP03/03745, Oct. 2003.
Notification Concerning Submission or Transmittal of Priority Document (Form PCT/IB/304) issued in connection with PCT/JP03/03745, May 2003.
Notice Informing the Applicant of the Communication of the International Application to the Designated Offices (Form PCT/IB/308) issued in connection with PCT/JP03/03745, Jun. 2003.
Hayashi Hisataka
Inazawa, legal representative Rie
Ogawa Kazuto
Ohiwa Tokuhisa
Deo Duy-Vu N.
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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