Etching metal silicides and germanides

Details Etching metal silicides and germanides Etching metal silicides and germanides

2006-06-06

2006-06-06

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000

Reexamination Certificate

active

07056780

ABSTRACT:
A metal silicide may be selectively etched by converting the metal silicide to a metal silicate. This may be done using oxidation. The metal silicate may then be removed, for example, by wet etching. A non-destructive low pH wet etchant may be utilized, in some embodiments, with high selectivity by dissolution.

REFERENCES:
patent: 4285761 (1981-08-01), Fatula et al.
patent: 6696327 (2004-02-01), Brask et al.

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