Etching aftertreatment method

Details Etching aftertreatment method Etching aftertreatment method

2006-04-11

2006-04-11

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S715000, C438S725000, C216S063000, C216S067000, C216S079000

Reexamination Certificate

active

07026252

ABSTRACT:
After etching a Si-containing low permittivity insulating film with chlorine based gas, the etched wafer is subjected to an etching aftertreatment process comprising introducing oxygen gas to a vacuum processing chamber with a pressure as low as 0.2 Pa to 1 Pa and a flow rate as low as 5 cc to 20 cc/min, generating plasma within the chamber, heating the wafer 2 being subjected to aftertreatment between 50° C. and 200° C., applying a wafer bias power within the range of 50 W to 200 W, and exposing the wafer to the generated plasma, thereby simultaneously removing the photoresist components, the antireflection film components and the halogen components.

REFERENCES:
patent: 5578163 (1996-11-01), Yachi
patent: 6037250 (2000-03-01), Matsubara
patent: 6168726 (2001-01-01), Li et al.
patent: 2003/0075524 (2003-04-01), Kawaguchi et al.
Wolf, Semiconductor Processing for the VLSI Era, 2002, vol. 4, Lattice Press, pp. 639, 650, 653-54.
Wolf, Silicon Processing for the VLSI Era, 2002, Lattice Press, vol. 4, pp. 671-72.

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