Etchant for signal wire and method of manufacturing thin...

Details Etchant for signal wire and method of manufacturing thin... Etchant for signal wire and method of manufacturing thin...

2008-05-13

2008-05-13

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S584000

Reexamination Certificate

active

07371622

ABSTRACT:
Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)XLY, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.

REFERENCES:
patent: 5994156 (1999-11-01), Voutsas et al.
patent: 6081308 (2000-06-01), Jeong et al.
patent: 6200694 (2001-03-01), Kohsaka et al.
patent: 10-240150 (1998-09-01), None
patent: 10-282520 (1998-10-01), None
patent: 2000-275663 (2000-10-01), None
patent: 2001-166336 (2001-06-01), None
patent: 1019990031518 (1999-05-01), None
English Abstract for Publication No.: 010-240150.
English Abstract for Publication No.: 10-282520.
English Abstract for Publication No.: 1019990031518.
English Abstract for Publication No.: 2000-275663.
English Abstract for Publication No.: 2001-166336.

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