Etchant and method of use

Details Etchant and method of use Etchant and method of use

2006-07-11

2006-07-11

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S720000, C438S723000, C438S724000, C438S734000, C438S740000

Reexamination Certificate

active

07074724

ABSTRACT:
A method of anisotropiocally etching a semiconductive substrate uses a hydrofluorocarbon etch gas with an etch selectivity fluorocarbon gas. The fluorocarbon gas is used under conditions that enhance selectivity of the etch to an etch stop layer with respect to a bulk dielectric material such as doped or undoped silicon dioxide. In one method, a silicon dioxide dielectric layer is provided upon an etch stop layer, wherein the etch stop layer comprises silicon dioxide that is doped differently from the silicon dioxide dielectric layer. A gaseous etchant including a hydrofluorocarbon etch gas and a fluorocarbon selectivity compound is provided, and the silicon dioxide dielectric layer is exposed to the gaseous-etchant.

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