Etchant and method of use

Details Etchant and method of use Etchant and method of use

2005-05-10

2005-05-10

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S724000, C438S720000, C438S734000, C438S740000

Reexamination Certificate

active

06890863

ABSTRACT:
The present invention relates to a method of anisotropically etching a semiconductive substrate uses a hydrofluorocarbon etch gas with an etch selectivity fluorocarbon gas that previously was used to enhance oxide etching but not nitride selectivity. The present invention uses the fluorocarbon gas under conditions that enhance selectivity of the etch to nitride with respect to a bulk dielectric material such as doped and undoped silicon dioxide.

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