Etch with ramping

Details Etch with ramping Etch with ramping

2006-11-14

2006-11-14

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S724000, C156S345330

Reexamination Certificate

active

07135410

ABSTRACT:
A method for etching a feature in an etch layer through a mask over a substrate. The substrate is placed in a process chamber. An etch plasma is provided to the process chamber, where the etch plasma begins to etch. A feature is etched in the etch layer with the etch plasma. At least one etch plasma parameter is ramped during the etching of the feature to optimize plasma parameters with the changing etch depth and the feature is etched with the ramped plasma until the feature is etched to a feature depth.

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International Search Report, mailed on Dec. 15, 2004.

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