Etch stop layer for a metallization layer with enhanced...

Details Etch stop layer for a metallization layer with enhanced... Etch stop layer for a metallization layer with enhanced...

2011-01-11

2011-01-11

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE23160

Reexamination Certificate

active

07867917

ABSTRACT:
By providing a barrier layer stack including a thin SiCN layer for enhanced adhesion, a silicon nitride layer for confining a copper-based metal region (thereby also effectively avoiding any diffusion of oxygen and moisture into the copper region), and a SiCN layer, the total relative permittivity may still be maintained at a low level, since the thickness of the first SiCN layer and of the silicon nitride layer may be moderately thin, while the relatively thick silicon carbide nitride layer provides the required high etch selectivity during a subsequent patterning process of the low-k dielectric layer.

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Double Patent/Copending claims U.S. Appl. No. 11/426,970, pp. 1-4.

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