Etch resistant pattern formation via interfacial silylation proc

Details Etch resistant pattern formation via interfacial silylation proc Etch resistant pattern formation via interfacial silylation proc

1989-07-27

1992-11-24

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430272, 430327, 430330, G03C 516

Patent

active

051660385

ABSTRACT:
A pattern is formed by first coating on a substrate a photosensitive organic polymer layer, and then an overlying film comprising an aminoalkoxysilane. After exposure in a predetermined pattern to radiation, the coated substrate is heated at a temperature so as to form an interfacial silicon-containing coupling layer between the film and the crosslinked portions of the polymer layer. Then, the coated substrate is contacted with a solvent so that the uncrosslinked portions of the polymer layer and the overlying portions of the film are simultaneously removed from the substrate. The process provides a high resolution, high aspect ratio pattern which demonstrates excellent etch resistance, while avoiding costly and cumbersome image transfer steps.

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