Etch residue reduction by ash methodology

Details Etch residue reduction by ash methodology Etch residue reduction by ash methodology

2011-03-22

2011-03-22

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S638000, C438S639000, C438S642000, C438S643000, C438S645000, C438S710000, C438S734000, C257SE21579, C257SE21029, C257SE21257

Reexamination Certificate

active

07910477

ABSTRACT:
Methods for forming dual damascene interconnect structures are provided. The methods incorporate an ashing operation comprising a first ash operation and a second overash operation. The ashing operation is performed prior to etching of an etch stop layer. The operation removes residue from a cavity formed during formation of the interconnect structure and facilitates better CD control without altering the cavity profiles.

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