Etch rate uniformity

Details Etch rate uniformity Etch rate uniformity

2005-05-03

2005-05-03

Vinh, Lan (Department: 1765)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With mechanical mask, shield or shutter for shielding workpiece

C156S345350, C438S706000, C438S731000

Reexamination Certificate

active

06887340

ABSTRACT:
An etching apparatus has a chamber enclosing a first electrode, a second electrode, confinement rings, a focus ring, and a shield. The first electrode is coupled to a source of a fixed potential. The second electrode is coupled to a dual frequency RF power source. The confinement rings are disposed between the first electrode and the second electrode. The chamber is formed of an electrically conductive material coupled to the source. The focus ring substantially encircles the second electrode and electrically insulates the second electrode. The shield substantially encircles the focus ring. The distance between an edge of the second electrode and an edge of the shield is at least less than the distance between the edge of the second electrode and an edge of the first electrode. The shield is formed of an electrically conductive material coupled to the source of fixed potential.

REFERENCES:
patent: 4392932 (1983-07-01), Harra
patent: 4632719 (1986-12-01), Chow et al.
patent: 4954201 (1990-09-01), Latz et al.
patent: 5292399 (1994-03-01), Lee et al.
patent: 5534751 (1996-07-01), Lenz et al.
patent: 5942042 (1999-08-01), Gogh
patent: 5998932 (1999-12-01), Lenz
patent: 6051073 (2000-04-01), Chu et al.
patent: 6074488 (2000-06-01), Roderick et al.
patent: 6178919 (2001-01-01), Li et al.
patent: 6241477 (2001-06-01), Brezoczky et al.
patent: 6413382 (2002-07-01), Wang et al.
patent: 6553277 (2003-04-01), Yagisawa et al.
patent: 0 660 499 (1993-12-01), None
patent: 0 665 575 (1994-02-01), None
patent: WO-9914788 (1997-09-01), None
PCT International Search Report, PCT/US 02/36557 International filing date Nov. 13, 2002, date Search Report mailed Apr. 8, 2003.

Affiliated with

Also associated with

Rating

Etch rate uniformity does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etch rate uniformity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etch rate uniformity will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3423549