Etch process for forming contacts over titanium silicide

Details Etch process for forming contacts over titanium silicide Etch process for forming contacts over titanium silicide

1995-09-01

1999-08-10

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438714, 438738, H01L 2100

Patent

active

059358777

ABSTRACT:
A plasma etch process for an insulating layer, such as silicon dioxide, overlaying a silicide layer having a high selectivity with respect to the silicide layer is disclosed, comprising the use of a mixture of a nitrogen-containing gas and one or more other fluorine-containing etch gases in an etch chamber maintained within a pressure range of from about 5 millitorr to about 400 millitorr. The high selectivity exhibited by the etch process of the invention permits operation of the etch process at reduced pressures of from as low as 5 millitorr to about 30 millitorr to achieve complete etching of vertical sidewall openings in the oxide layer with significant overetch capability.

REFERENCES:
patent: 4615764 (1986-10-01), Bobbio et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4711698 (1987-12-01), Douglas
patent: 4734157 (1988-03-01), Carbaugh et al.
patent: 4753709 (1988-06-01), Welch et al.
patent: 4863559 (1989-09-01), Douglas
patent: 4957590 (1990-09-01), Douglas
patent: 5100505 (1992-03-01), Cathey et al.
patent: 5176790 (1993-01-01), Arleo et al.
patent: 5254213 (1993-10-01), Tamaki
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5284549 (1994-02-01), Barnes et al.
patent: 5468296 (1995-11-01), Patrick et al.
patent: 5468339 (1995-11-01), Gupta et al.
patent: 5468340 (1995-11-01), Gupta et al.
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5604601 (1997-02-01), Kawasaki
patent: 5662772 (1997-09-01), Scheiter et al.

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