Etch process for etching microstructures

Details Etch process for etching microstructures Etch process for etching microstructures

2005-08-30

2005-08-30

Norton, Nadine G. (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

Relative movement between the substrate and a confined pool...

C216S091000, C216S099000, C216S103000, C216S107000

Reexamination Certificate

active

06936183

ABSTRACT:
A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.

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