ESD structure that employs a schottky-barrier to reduce the like

Details ESD structure that employs a schottky-barrier to reduce the like ESD structure that employs a schottky-barrier to reduce the like

1996-10-22

1998-06-09

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257361, 257362, 257477, 257484, H01L 2362

Patent

active

057639183

ABSTRACT:
The preferred embodiment of the present invention overcomes the limitations of the prior art and provides a device and method to decrease the latch-up susceptibility of an ESD structure by suppressing the injection of minority carriers that cause transistor action to occur. This is accomplished, for example, by using a metal contact to the n-substrate or n-well in place of or in parallel with the prior art p-diffusion. Using such a metal contact forms a Schottky Barrier Diode (SBD) with the ESD structure. Since the SBD is a majority-carrier device, negligible minority carriers are injected when the SBD is in forward bias, thereby reducing the likelihood of latch-up.

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