ESD protection transistor

Details ESD protection transistor ESD protection transistor

2009-03-24

2010-10-05

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S382000, C438S197000, C438S199000, C257S360000, C257S362000, C257S355000, C257S356000

Reexamination Certificate

active

07807528

ABSTRACT:
An electrostatic discharge (ESD) transistor structure includes a self-aligned outrigger less than 0.4 microns from a gate electrode that is 50 microns wide. The outrigger is fabricated on ordinary logic transistors of an integrated circuit without severely affecting the performance of the transistors. The outrigger is used as an implant blocking structure to form first and second drain regions on either side of a lightly doped region that underlies the outrigger. The self-aligned outrigger and the lightly doped region beneath it are used to move the location of avalanche breakdown upon an ESD event away from the channel region. Durability is extended when fewer “hot carrier” electrons accumulate in the gate oxide. A current of at least 100 milliamperes can flow into the drain and then through the ESD transistor structure for a period of more than 30 seconds without causing a catastrophic failure of the ESD transistor structure.

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