Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-25
2009-12-29
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S174000, C257S356000, C257S357000, C257S358000, C257S359000, C257S360000, C257S361000, C257S362000, C257S363000, C257SE27001, C257SE29001
Reexamination Certificate
active
07638847
ABSTRACT:
An ESD protection structure includes, in part, a NMOS transistor having a source and drain in a well in a substrate and a gate on the substrate with the source and drain being connected between ground and a series diode, and the gate being connected to ground. The structure further includes a diode having a cathode connected to the input pad and an anode connected to the well so that the diode is reverse-biased in the event of a positive voltage ESD event on the input pad. As a result, in a positive voltage ESD event, the avalanche effect rapidly injects current into the substrate and therefore into the base of the parasitic bipolar transistor so as to trigger the transistor into conduction and discharge the ESD pulse. Alternatively, the diode is a Zener diode and the current is generated by the Zener effect. A complementary structure provides protection against a negative ESD pulse.
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Huang Cheng-Hsiung
Liu Yow-Juang (Bill)
O Hugh Sungki
Shih Chih-Ching
Altera Corporation
Soward Ida M
Ward & Olivo LLP
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