ESD protection structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S355000, C257S356000, C257S357000, C257S567000, C361S111000

Reexamination Certificate

active

06949802

ABSTRACT:
The invention describes structures and a process for providing ESD protection between multiple power supply lines or buses on an integrated circuit chip. Special diode strings are used for the protection devices whereby the diodes are constructed across the boundary of an N-well and P substrate or P-well. The unique design provides very low leakage characteristics during normal circuit operation, as well as improved trigger voltage control achieved by stacking 2 or more diodes in a series string between the power buses.

REFERENCES:
patent: 3806773 (1974-04-01), Watanabe
patent: 5761697 (1998-06-01), Curry et al.
patent: 5814866 (1998-09-01), Borland
patent: 5877927 (1999-03-01), Parat et al.
patent: 5907464 (1999-05-01), Maloney et al.
patent: 5959820 (1999-09-01), Ker et al.
patent: 6157530 (2000-12-01), Pequignot et al.
patent: 6249414 (2001-06-01), Lee et al.
patent: 6271999 (2001-08-01), Lee et al.

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