ESD protection device for high voltage

Details ESD protection device for high voltage ESD protection device for high voltage

2008-06-10

2008-06-10

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

C438S199000, C438S275000, C438S335000, C438S357000, C257SE21350, C257SE21605

Reexamination Certificate

active

07384802

ABSTRACT:
An electrostatic discharge (ESD) protection structure and a method for forming the same are provided. The structure includes a substrate having a buried layer, and a first and a second high-voltage well region on the buried layer. The first and second high-voltage well regions have opposite conductivity types and physically contact each other. The structure further includes a field region extending from the first high-voltage well region into the second high-voltage well region, a first doped region in the first high-voltage well region and physically contacting the field region, and a second doped region in the second high-voltage well region and physically contacting the field region. The first and second doped regions and the first high-voltage well region form a bipolar transistor that can protect an integrated circuit from ESD.

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