ESD protection device for high performance IC

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S202000, C438S305000

Reexamination Certificate

active

10917699

ABSTRACT:
The present invention includes a circuit structure for ESD protection and methods of making the circuit structure. The circuit structure can be used in an ESD protection circuitry to protect certain devices in an integrated circuit, and can be fabricated without extra processing steps in addition to the processing steps for fabricating the ESD protected devices in the integrated circuit.

REFERENCES:
patent: 5663082 (1997-09-01), Lee

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