Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-06
2007-03-06
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S202000, C438S305000
Reexamination Certificate
active
10917699
ABSTRACT:
The present invention includes a circuit structure for ESD protection and methods of making the circuit structure. The circuit structure can be used in an ESD protection circuitry to protect certain devices in an integrated circuit, and can be fabricated without extra processing steps in addition to the processing steps for fabricating the ESD protected devices in the integrated circuit.
REFERENCES:
patent: 5663082 (1997-09-01), Lee
Huang Cheng
Liu Yowjuang (Bill)
Altera Corporation
Morgan & Lewis & Bockius, LLP
Pham Long
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