Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-09-24
1998-12-15
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257362, 257363, 257175, H01L 2362
Patent
active
058500952
ABSTRACT:
The present invention provides a high efficiency ESD circuit that requires less space through uniform activation of multiple emitter fingers of a transistor structure containing an integral Zener diode. The Zener diode is able to lower the protection circuit trigger threshold from around 18 volts to around 7 volts. This method minimizes series impedance of the signal path, thereby rendering an NPN structure that is particularly well suited for protecting bipolar and CMOS input and output buffers. The ESD circuit of the present invention provides a relatively low shunt capacitance (typically <0.5 pF) and series resistance (typically <0.5 ohm) that are desirable for input and output circuits of present and future contemplated generations of sub-micron bipolar/BiCMOS circuit processes.
REFERENCES:
patent: 5223737 (1993-06-01), Canclini
patent: 5276582 (1994-01-01), Merrill et al.
patent: 5341005 (1994-08-01), Canclini
patent: 5623387 (1997-04-01), Li et al.
IEEE, 1996 ieee international reliability physics proceedings, Design and Layout of a High ESD Performance NPN Structure for Submicron BiCMOS/Bipolar Circuits, pp. 227-232.
Amerasekera Ajith
Chen Julian Zhiliang
Vrotsos Thomas A.
Zhang Xin Yi
Bassulk Lawrence J.
Donaldson Richard L.
Maginniss Christopher L.
Texas Instruments Incorporated
Whitehead Jr. Carl W.
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