Photomask for use in exposure and method for producing same

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

Patent

active

060133953

ABSTRACT:
An exposure photomask which transfers a desired pattern onto a semiconductor substrate S, which has a step, has a region formed by a light-blocking film and a region formed by a translucent film. The ideal optical path difference between exposure light that passes through the translucent film and exposure light that passes through a completely transparent part and the ideal mask pattern size are determined based on the step in the semiconductor substrate, and on the desired pattern size, the pattern being formed in accordance with the ideal optical path difference and ideal mask pattern size. The thickness of the translucent film is established so that the optical path difference between exposure light that passes through the translucent film and the exposure light that passes through a completely transparent part is approximately equal to the step in the semiconductor substrate.

REFERENCES:
patent: 5389474 (1995-02-01), Iguchi et al.
patent: 5547788 (1996-08-01), Han et al.
patent: 5592259 (1997-01-01), Anzai et al.

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