ESD protection circuit and method for fabricating same using a p

Details ESD protection circuit and method for fabricating same using a p ESD protection circuit and method for fabricating same using a p

1998-10-29

2000-08-01

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438281, 438283, 438305, 438926, H01L 21336

Patent

active

060966092

ABSTRACT:
An ESD (Electro-Static Discharge) protection circuit includes a semiconductor substrate having an active region and field regions, isolating films formed in the field regions, a gate insulating film formed on the active region, and a gate electrode formed on the gate insulating film, first and second heavily doped impurity regions formed in a surface of the semiconductor substrate at sides of the gate electrode, a plurality of dummy gate electrodes formed on the second heavily doped impurity region and offset from the gate electrode, insulating sidewalls formed at the sides of the gate electrode and at sides of each of the dummy gate electrodes, and salicide films formed on a surface of the gate electrode, on surfaces of each of the dummy gate electrodes and on a surface of the first heavily doped impurity region.

REFERENCES:
patent: 4753896 (1988-06-01), Matloubian
patent: 4753897 (1988-06-01), Lund et al.
patent: 5429975 (1995-07-01), Sheu et al.
patent: 5529941 (1996-06-01), Huang
patent: 5990520 (1999-11-01), Noorlag et al.
patent: 5998252 (1999-12-01), Huang
Amerasekera, Ajith et al., "Design and Layout Requirement", ESD in Silicon Integrated Circuits, pp. 55-64.

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