ESD performance using separate diode groups

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S363000

Reexamination Certificate

active

07002216

ABSTRACT:
Disclosed are architectures and method for semiconductor ESD protection using grouped diodes, with the diode groups being electrically separated by substrate resistance. The mixed diode/resistor groups are arranged to be in an off state under normal operating conditions and to discharge ESD current between power lines. The disclosed architectures and method protects circuits using different power supplies and/or voltage inputs.

REFERENCES:
patent: 4037140 (1977-07-01), Eaton, Jr.
patent: 5290724 (1994-03-01), Leach
patent: 5610790 (1997-03-01), Staab et al.
patent: 5708550 (1998-01-01), Avery
patent: 6002568 (1999-12-01), Ker et al.
patent: 6249410 (2001-06-01), Ker et al.
patent: 6671147 (2003-12-01), Ker et al.
patent: 6671153 (2003-12-01), Ker et al.
patent: 6674622 (2004-01-01), Yu et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

ESD performance using separate diode groups does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with ESD performance using separate diode groups, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ESD performance using separate diode groups will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3700656

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.