Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-16
2009-10-13
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29042, C438S216000
Reexamination Certificate
active
07602009
ABSTRACT:
A non-volatile memory is described having memory cells with a gate dielectric. The gate dielectric is a multilayer charge trapping dielectric between a control gate and a channel region of a transistor to trap positively charged holes. The multilayer charge trapping dielectric comprises at least one layer of high-K.
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Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Monbleau Davienne
Rodela Eduardo A
Schwegman Lundberg & Woessner, P.A.
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