EPROM in double poly high density CMOS

Details EPROM in double poly high density CMOS EPROM in double poly high density CMOS

1997-11-03

1999-02-16

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

257315, 438262, 438316, 438396, H01L 218247

Patent

active

058720340

ABSTRACT:
A method of making an EPROM transistor in a high density CMOS integrated circuit having a poly to poly capacitor and including two layers of polysilicon. The EPROM transistor is made using only the steps used to make the other components of the high density CMOS integrated circuit. The EPROM transistor is programmable at the low voltages which high density CMOS transistors can handle.

REFERENCES:
patent: 5014098 (1991-05-01), Schlais et al.

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