Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-02
2000-04-25
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438257, 438265, H01L 21336
Patent
active
060543507
ABSTRACT:
A split gate EPROM cell and a method that includes a gate structure having a sidewall spacer of differential composition disposed about a floating gate which facilitates control of the spacer thickness during fabrication. Controlling the thickness of the spacer allows avoiding a reduction of the distance between the floating gate and the control gate as well as leakage of the charge from the floating gate.
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Hsieh Tsong-Minn
Sung Kuo-Tung
Berezny Neal
Mosel Vitelic Inc.
Niebling John F.
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