Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Patent
1992-07-28
1994-03-15
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
257788, 528406, H01L 2328
Patent
active
052948358
ABSTRACT:
A semiconductor device in which a semiconductor chip is encapsulated in an epoxy resin composition comprising (A) an epoxy resin represented by formula (I): ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, and R.sub.4 each represents an alkyl group having from 1 to 4 carbon atoms, and (B) a reaction product obtained by preliminarily reacting a silane compound represented by formula (II): ##STR2## wherein X represents a monovalent organic group having at least one functional group selected from the group consisting of a glycidyl group, an amino group, and a mercapto group; Y represents an alkoxy group having from 1 to 4 carbon atoms; and n represents 0, 1 or 2, with a phenol aralkyl resin represented by formula (III) ##STR3## wherein m represents 0 or a positive integer. The epoxy resin composition has low moisture absorption and low stress to provide a semiconductor device excellent in thermal crack resistance and moisture resistance.
REFERENCES:
patent: 4072656 (1978-02-01), Hartmann
patent: 4153621 (1979-05-01), Hartmann
Igarashi Kazumasa
Ikemura Kazuhiro
Ito Satoshi
Kimura Hideto
Komoto Michio
Crane Sara W.
Nitto Denko Corporation
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