Epitaxially grown fin for FinFET

Details Epitaxially grown fin for FinFET Epitaxially grown fin for FinFET

2007-02-27

2007-02-27

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S283000, C438S592000

Reexamination Certificate

active

10975475

ABSTRACT:
A method of forming a fin for a fin field effect transistor (FinFET) includes defining a trench in a layer of first material, where a width of an opening of the trench is substantially smaller than a thickness of the layer. The method includes growing a second material in the trench to form the fin and removing the layer of first material.

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patent: 2004/0075122 (2004-04-01), Lin et al.
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Yang-Kyu Choi et al., “Nanoscale CMOS Spacer FinFET for the Terabit Era,” IEEE Electron Device Letters, vol. 23, No. 1, Jan. 2002, pp. 25-27.

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