Epitaxially deposited source/drain

Details Epitaxially deposited source/drain Epitaxially deposited source/drain

2006-06-13

2006-06-13

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S194000, C438S222000

Reexamination Certificate

active

07060576

ABSTRACT:
An epitaxially deposited source/drain extension may be formed for a metal oxide semiconductor field effect transistor. A sacrificial layer may be formed and etched away to undercut under the gate electrode. Then a source/drain extension of epitaxial silicon may be deposited to extend under the edges of the gate electrode. As a result, the extent by which the source/drain extension extends under the gate may be controlled by controlling the etching of the sacrificial material. Its thickness and depth may be controlled by controlling the deposition process. Moreover, the characteristics of the source/drain extension may be controlled independently of those of the subsequently formed deep or heavily doped source/drain junction.

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S. Gannavaram et al.,Low Temperature (≦ 800° C) Recessed Junction Selective Silicon-Germanium Source/Drain Technology for sub-70 nm CMOS;International Electron Devices Meeting 2000, IEDM, Technical Digest, San Francisco, CA, Dec. 10-13, 2000, IEEE, US, Dec. 10, 2000, pp. 437-440.

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