Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-02-07
2006-02-07
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S492000, C438S503000, C438S974000
Reexamination Certificate
active
06995077
ABSTRACT:
A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface, wherein the surface of the epitaxial layer has a maximum density of 0.14 localized light scatterers per cm2with a cross section of greater than or equal to 0.12 μm, and the front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 μm×1 μm reference area. There is also a process for producing a semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. The process includes the following: (a) a stock removal polishing step as the only polishing step; (b) cleaning and drying of the semiconductor wafer; (c) pretreatment of the front surface of the semiconductor wafer at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor; and (d) deposition of the epitaxial layer on the front surface of the pretreated semiconductor wafer.
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English Derwent Abstract AN 2000-579981 [55] corresp. to DE 199 05 737.
English Derwent Abstract AN 1999-519699 [44] corresp. to DE 198 33 257.
H.M. Liaw, J.W. Rose, Epitaxial Silicon Technology, Academic Press Inc., Orlando, Florida, 1986, p. 71-73.
Siebert Wolfgang
Storck Peter
Brooks & Kushman P.C.
Dang Trung
Siltronic AG
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