Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-05-26
2010-12-14
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S514000, C438S517000, C438S524000
Reexamination Certificate
active
07851291
ABSTRACT:
A method for selectively relieving channel stress for n-channel transistors with recessed, epitaxial SiGe source and drain regions is described. This increases the electron mobility for the n-channel transistors without affecting the strain in p-channel transistors. The SiGe provides lower resistance when a silicide is formed.
REFERENCES:
patent: 5155571 (1992-10-01), Wang et al.
patent: 6006520 (1999-12-01), Zehnder, II et al.
patent: 6066520 (2000-05-01), Suzuki
patent: 6717216 (2004-04-01), Baie et al.
patent: 6825086 (2004-11-01), Lee et al.
patent: 6838728 (2005-01-01), Lochtefeld et al.
patent: 6897114 (2005-05-01), Krueger et al.
patent: 6906393 (2005-06-01), Sayama et al.
patent: 6949482 (2005-09-01), Murthy et al.
patent: 7052964 (2006-05-01), Yeo et al.
patent: 7164183 (2007-01-01), Sakaguchi et al.
patent: 7205604 (2007-04-01), Ouyang et al.
patent: 7315051 (2008-01-01), Cheng
patent: 7354835 (2008-04-01), Shin et al.
patent: 2003/0132487 (2003-07-01), Cabral et al.
patent: 2005/0026342 (2005-02-01), Fung et al.
patent: 2005/0073022 (2005-04-01), Karlsson et al.
patent: 2005/0280098 (2005-12-01), Shin et al.
patent: 2007/0045729 (2007-03-01), Hoentschel et al.
patent: 2007/0096195 (2007-05-01), Hoentschel et al.
patent: 2007/0155063 (2007-07-01), Datta et al.
Office Action from German Patent Application No. 11 2007 000 662.5-33 mailed Jul. 10, 2009, 4 pgs.
International Preliminary Report on Patentability from PCT/US2007/007707 mailed Oct. 9, 2008, 8 pgs.
International Search Report and Written Opinion from PCT/US2007/007707 mailed Sep. 4, 2007, 9 pgs.
Office Action from Chinese Patent Application No. 200780012220.4 mailed Feb. 12, 2010, 5 pgs.
Brask Justin K.
Cea Steven M.
Kavalieros Jack T.
Shifren Lucian
Weber Cory E.
Blakely , Sokoloff, Taylor & Zafman LLP
Brown Valerie
Intel Corporation
Nguyen Ha Tran T
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