Epitaxial semiconductor wafer and a manufacturing method...

Details Epitaxial semiconductor wafer and a manufacturing method... Epitaxial semiconductor wafer and a manufacturing method...

2005-11-15

2005-11-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S348000, C257S349000, C257S350000, C257S351000, C257S353000, C257S354000, C257S507000

Reexamination Certificate

active

06965149

ABSTRACT:
An epitaxial semiconductor wafer having a wafer substrate made of semiconductor single crystal, an epitaxial layer deposited on a top surface of said wafer substrate and a polysilicon layer deposited on a back surface of said wafer substrate. The semiconductor single crystal is exposed in a region defined within a distance of at least 50 μm from a ridge line as a center, which is defined as an intersection line between said back surface and a bevel face interconnecting said top surface and said back surface of said wafer substrate. The polysilicon layer is 1.0 to 2.0 μm thick. The epitaxial layer is 1.0 to 20 μm thick. The wafer substrate is a silicon single crystal.

REFERENCES:
patent: 5362683 (1994-11-01), Takenaka et al.

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