Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2011-01-04
2011-01-04
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S300000, C438S758000, C257SE21102, C257SE21103
Reexamination Certificate
active
07863163
ABSTRACT:
A method for depositing a carbon doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 700 torr in a process chamber housing a patterned substrate having exposed single crystal material. The method further comprises providing a flow of a silicon source gas to the process chamber. The silicon source gas comprises dichlorosilane. The method further comprises providing a flow of a carbon precursor to the process chamber. The method further comprises selectively depositing the carbon doped epitaxial semiconductor layer on the exposed single crystal material.
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ASM America Inc.
Knobbe Martens Olson & Bear LLP
Scarlett Shaka
Smith Matthew S
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