Epitaxial and polycrystalline growth of Si1-x-yGexCy and...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S479000

Reexamination Certificate

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06908866

ABSTRACT:
A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350° C. to 750° C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon <1020cm−3, the as-grown p- or n-type dopant profile can withstand furnace anneals to temperatures of 850° C. and rapid thermal anneal temperatures to 1000° C.

REFERENCES:
patent: 4974543 (1990-12-01), Jansen
patent: 5208102 (1993-05-01), Schulz et al.
patent: 5477023 (1995-12-01), Schneider et al.
patent: 5634973 (1997-06-01), Cabral et al.
patent: 5683934 (1997-11-01), Candelaria et al.
patent: 5906680 (1999-05-01), Meyerson
patent: 5929259 (1999-07-01), Lockemeyer
patent: 6180497 (2001-01-01), Sato et al.
patent: 6190975 (2001-02-01), Kubo et al.
patent: 6306211 (2001-10-01), Takahashi et al.
patent: 6403976 (2002-06-01), Saitoh et al.
patent: 2002/0016085 (2002-02-01), Huang et al.
patent: 2002/0160605 (2002-10-01), Kanazawa et al.
E. Kasper, et al. “Growth of 100 Ghz SiGe-Heterobipolar Transistor (HBT) Structures,” Jpn J App Phys, vol. 33 Pt. 1, No. 4B, Apr. 1994, pp. 2415-2418.
H.J. Osten et al. in the paper entitled “Carbon Doped SiGe Heterojunction Bipolar Transistors for High Frequency Application,” IEEE BCTM 7.1, 1999, pp. 109-116.

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