EPI T-gate structure for CoSi 2 extendibility

Details EPI T-gate structure for CoSi 2 extendibility EPI T-gate structure for CoSi 2 extendibility

2006-01-26

2009-11-24

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S184000, C257SE21205

Reexamination Certificate

active

07622339

ABSTRACT:
A semiconductor process and apparatus provide a T-shaped structure (96) formed from a polysilicon structure (10) and an epitaxially grown polysilicon layer (70) and having a narrower bottom critical dimension (e.g., at or below 40 nm) and a larger top critical dimension (e.g., at or above 40 nm) so that a silicide may be formed from a first material (such as CoSi2) in at least the upper region (90) of the T-shaped structure (96) without incurring the increased resistance caused by agglomeration and voiding that can occur with certain silicides at the smaller critical dimensions.

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