Envelope follower end point detection in time division...

Details Envelope follower end point detection in time division... Envelope follower end point detection in time division...

2006-09-05

2006-09-05

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S718000, C438S719000

Reexamination Certificate

active

07101805

ABSTRACT:
The present invention provides a method and an apparatus for establishing endpoint during an alternating cyclical etch process or time division multiplexed process. A substrate is placed within a plasma chamber and subjected to an alternating cyclical process having an etching step and a deposition step. A variation in plasma emission intensity is monitored using known optical emission spectrometry techniques. An amplitude information is extracted from a complex waveform of the plasma emission intensity using an envelope follower algorithm. The alternating cyclical process is discontinued when endpoint is reached at a time that is based on the monitoring step.

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