Enhanced transistor performance by non-conformal stressed...

Details Enhanced transistor performance by non-conformal stressed... Enhanced transistor performance by non-conformal stressed...

2011-05-03

2011-05-03

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21424

Reexamination Certificate

active

07935588

ABSTRACT:
NFET and PFET devices with separately strained channel regions, and methods of their fabrication is disclosed. A stressing layer overlays the device in a manner that the stressing layer is non-conformal with respect the gate. The non-conformality of the stressing layer increases the amount of stress that is imparted onto the channel of the device, in comparison to stressing layers which are conformal. The method for overlaying in a non-conformal manner includes non-conformal deposition techniques, as well as, conformal depositions where subsequently the layer is turned into a non-conformal one by etching.

REFERENCES:
patent: 6977194 (2005-12-01), Belyansky
patent: 7002209 (2006-02-01), Chen
patent: 7105394 (2006-09-01), Hachimine
patent: 7115954 (2006-10-01), Shimizu
patent: 7205615 (2007-04-01), Tsutsui
patent: 7223647 (2007-05-01), Hsu
patent: 2005/0158955 (2005-07-01), Yang et al.
patent: 2006/0057787 (2006-03-01), Doris
patent: 2006/0249794 (2006-11-01), Teh et al.
patent: 2007/0077765 (2007-04-01), Prince et al.
patent: 2007/0096220 (2007-05-01), Kim et al.
“High speed 45 nm gate length CMOSFETs integrated into a 90nm bulk technology incorporating strain engineering” V. Chan et al., IEDM Tech. Dig., pp. 77-80, 2003.
“Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing” H..S. Yang, et al., IEDM Tech. Dig., pp. 1075-1078, 2004.

Affiliated with

Also associated with

Rating

Enhanced transistor performance by non-conformal stressed... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhanced transistor performance by non-conformal stressed..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced transistor performance by non-conformal stressed... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2644830