Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2005-03-22
2005-03-22
McDonald, Rodney G. (Department: 1753)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S001000, C134S001200, C134S001300, C134S05600D, C134S902000, C216S067000, C156S345240, C156S345350, C204S192320, C204S192350, C204S192360
Reexamination Certificate
active
06868856
ABSTRACT:
Methods and apparatus for cleaning semiconductor processing equipment. The apparatus include both local and remote gas dissociators coupled to a semiconductor processing chamber to be cleaned. The methods include introducing a precursor gas into the remote dissociator where the gas is dissociated and introducing a portion of the dissociated gas into the chamber. Another portion of the dissociated gas which re-associates before introduction into the chamber is also introduced into the chamber where it is again dissociated. The dissociated gas combines with contaminants in the chamber and is exhausted from the chamber along with the contaminants.
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Grill, Alfred, “Cold Plasma in Materials Fabrication”, IEEE Press, 1994, pp. 109-110, 160-163.
DeShong Heath B.
Foster Jason
Kim Bok Heon
Latchford Ian
Nowak Thomas
Applied Materials Inc.
McDonald Rodney G.
Townsend and Townsend and Crew
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