Enhanced reactive DC sputtering system

Details Enhanced reactive DC sputtering system Enhanced reactive DC sputtering system

1995-09-29

1999-12-14

McDonald, Rodney G.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419213, 20419215, 20419222, 20429803, 20429806, 20429808, C23C 1434

Patent

active

060012242

ABSTRACT:
An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor (13 and 14) is switched to ground (9) or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma (5) prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system (22) in the power source (1).

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Excerpts from an European patent Office action related to the parent case.

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